Will help to expand communication range and reduce power consumption
TOKYO–(BUSINESS WIRE)–Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will launch a 50W silicon radio-frequency (RF) high-power metal-oxide semiconductor field-effect transistor (MOSFET) module for use in high-frequency power amplifiers of commercial two-way radios on August 1. The model, which offers an industry-leading1 50W power output in the 763MHz to 870MHz band and high total efficiency2 of 40%, is expected to help expand radio communication range and reduce power consumption.
The 150MHz and 400MHz frequency bands used for various wireless systems have become congested in North America and other markets, so in response, the 700MHz band, formerly used for analog TV broadcasting, has been reallocated for commercial two-way radio, increasing the demand for radios that support this band. Conventional power amplifiers, however, experience large power loss, so there is a need for RF high-power MOSFET modules offering built-in input/output impedance-matching circuit3 and guaranteed output-power performance. The new silicon RF high-power MOSFET (RA50H7687M1), which achieves unmatched power output and high total efficiency for commercial radios compatible with the 700MHz band, is expected to expand the communication range and lower the power consumption of such radios.
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Semiconductor & Device Marketing Div.B
Mitsubishi Electric Corporation